The company expanded on its industry-leading 5th generation (1b) platform to create the 1c DDR5, minimizing potential errors and efficiently transferring performance advantages. By applying new materials to specific EUV processes and optimizing overall EUV application, SK hynix improved cost competitiveness and increased productivity by over 30 percent compared to the previous generation.
The 1c DDR5 operates at 8Gbps, 11 percent faster than its predecessor, with 9 percent better power efficiency. This could reduce data center power costs by up to 30 percent for cloud service providers.
"We will apply this 1c technology, which satisfies both top performance and cost competitiveness, to next-generation flagship DRAM products like HBM, LPDDR6, and GDDR7, providing differentiated value to customers," Kim Jong-hwan, head of DRAM development, said.
SK hynix plans to complete mass production preparations for 1c DDR5 by year-end and begin supply next year, aiming to lead growth in the memory semiconductor market.
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